SPECIAL MECHANISM OF CONDUCTION TYPE INVERSION IN PLASTICALLY DEFORMED n-Si

  • Teimuraz Pagava Georgian Technical University
  • Levan Chkhartishvili Georgian Technical University
  • Manana Beridze Georgian Technical University
  • Magda Metskhvarishvili Georgian Technical University
  • Iamze Kalandadze Georgian Technical University
  • Darejan Khocholava Georgian Technical University
  • Nona Esiava Georgian Technical University
  • Maia Kevkhishvili Georgian Technical University
  • Marine Matcharashvili Georgian Technical University
Keywords: conduction type inversion, plastic deformation, thermal treatment, silicon

Abstract

The aim of research is studying the mechanism of n–p inversion of the conduction type of deformed silicon crystals in the course of their thermal treatment. Initially, almost non-dislocation zone-melted phosphorus-doped n-Si single crystals with electron concentration of 2×1014 cm–3 were studied. Uniaxial compression at temperature of 700 °С and pressure of 25 MPa increased the dislocation density to 108 cm–2. After long (within 30 min) cooling of the deformed crystals to room temperature, an n–p inversion of the conduction type occurred. The effect is explained by the formation of phosphorus–divacancy complexes PV2 in the defective atmosphere of dislocations, which are acceptor centers with energy level of Ev+0.34 eV. The found out n–p inversion mechanism differs from the standard one for plastically deformed n-type semiconductors with a diamond-like crystalline structure, which consists in the formation of acceptor centers along edge dislocations.

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Author Biographies

Teimuraz Pagava, Georgian Technical University

Department of Engineering Physics

Levan Chkhartishvili, Georgian Technical University

Department of Engineering Physics

Manana Beridze, Georgian Technical University

Department of Engineering Physics

Magda Metskhvarishvili, Georgian Technical University

Department of Engineering Physics

Iamze Kalandadze, Georgian Technical University

Department of Engineering Physics

Darejan Khocholava, Georgian Technical University

Department of Engineering Physics

Nona Esiava, Georgian Technical University

Department of Engineering Physics

Maia Kevkhishvili, Georgian Technical University

Department of Engineering Physics

Marine Matcharashvili, Georgian Technical University

Department of Engineering Physics

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Published
2019-07-31
How to Cite
Pagava, T., Chkhartishvili, L., Beridze, M., Metskhvarishvili, M., Kalandadze, I., Khocholava, D., Esiava, N., Kevkhishvili, M., & Matcharashvili, M. (2019). SPECIAL MECHANISM OF CONDUCTION TYPE INVERSION IN PLASTICALLY DEFORMED n-Si. EUREKA: Physics and Engineering, (4), 76-81. https://doi.org/10.21303/2461-4262.2019.00938
Section
Fundamental and applied physics